Magnetic-field-induced lateral displacements of current filaments in n-GaAs
نویسندگان
چکیده
منابع مشابه
STEADY STATE PROPERTIES OF LOCK-ON CURRENT FILAMENTS IN GaAs
Collective impact ionization has been used to explain lock-on in semi-insulating GaAs under high-voltage bias. We have used this theory to study some of the steady state properties oflock-on current filaments. In steady state, the heat gained from the field is exactly compensated by the cooling due to phonon scattering. In the simplest approximation, the carrier distribution approaches a quasi-...
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ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 1994
ISSN: 0268-1242,1361-6641
DOI: 10.1088/0268-1242/9/4/007